Recessed-gate 4H-SiC MESFET의 DC특성에 관한 연구

박승욱; 황응준; 신무환; Seung Wook Park; Ung-Jun Hwang; Moo Whan Shin

Korean Journal of Materials Research, Vol.13, No.1, 11-17, January, 2003

DOI10.3740/MRSK.2003.13.1.011 Export Citation

Recessed-gate 4H-SiC MESFET의 DC특성에 관한 연구

Study on DC Characteristics of 4H-SiC Recessed-Gate MESFETs

박승욱, 황응준¹, 신무환^{1, †}

칩팩코리아 R＆D Center
¹명지대학교 세라믹 공학과 반도체 재료/소자 연구실

Seung Wook Park, Ung-Jun Hwang¹, and Moo Whan Shin^{1, †}

R & D Center, Chip Pac Korea, Korea
¹Swmiconductor Materials/Devices Lab., Department of Ceramic Engineering, Myoug Ji University, Korea

E-mail:

DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.

Keywords:Wide band-gap semiconductors;SiC;Schottky contact;MESFET;I-V Characteristics;Modeling

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[1] J. Appl. Phys., Huang M, Goldman N, Chang CH, Mayegoyz I, Mayergoyz J, McGarrity J, Woolard D

[2] Sze SM, Physics of Semiconductor Devices, John Wiley and Sons, 2nd Ed. Chap.1, 2 (1981) (1981)

[3] Coreanu, Avram M, Carbunescu E, ILiescu E, Mater. Sci. Semicond. Process, 3, 137 (2000)

[4] Wang J, Williams WB, Semicond. Sci. Technol., 14, 220 (1999)

[5] Alex Q, Huang, Zhang B, Solid-State Electronic., 44, 325 (2000)

[6] Chilukuri RK, Shenoy PM, Baliga BJ, Proc. of 1998 International Symposium on Power Semiconductor Devices & ICs, Kyoto, Japan, 115 (1998) (1998)

[7] Shin MW, Kordas TJ, Trew RJ, Proc. of 1995 International Symposium on Power Semiconductor Devices & ICs, Yokohama, Japan, 497 (1995) (1995)

[8] Brennan KF, Bellotti E, Farahmand M, Haralson J, Ruden PP, Albrecht JD, Sutandi A, Solid-State Electron., 44(2), 195 (2000)

[9] Lades M, Wachutka G, Solid-State Electron., 44(2), 359 (2000)

[10] Wesch W, Nucl. Instrum. Methods Phys. Res. B, 116, 305 (1996)

[11] Allen ST, Sheppard ST, Pribble WL, Sadler RA, Alcorn TS, Ring Z, Palmour JW, Proc. of Mat. Res. Soc. Symp. San Fransisco, 572, 15 (1999)

[12] Elford A, Mawby PA, Microelectronics Journal, 30, 527 (1998)

[13] Schaffer WC, Negley GH, Irvine KG, Palmour JW, Proc. Mater. Res. Soc. Symp., 339, 595 (1994)

[14] Rulf M, Mitlehner H, Helbig R, IEEE Trans. Electron Devices, 41, 1040 (1994)

[15] Defives D, Durand O, Wyczisk F, Noblanc O, Brylinski C, Meyer F, Microelectron. Eng., 55, 369 (2001)