CH 3 OH/H 2 O 가스의 기상활성법을 이용한 다이아몬드 박막성장 과정에서의 OES분석

이권재; 고재귀; 신재수; Kwon-Jai Lee; Jae-Gui Koh; Jae-Soo Shin

Korean Journal of Materials Research, Vol.13, No.1, 31-35, January, 2003

DOI10.3740/MRSK.2003.13.1.031 Export Citation

CH 3 OH/H 2 O 가스의 기상활성법을 이용한 다이아몬드 박막성장 과정에서의 OES분석

OES Analysis for Diamond Film Growth by Vapor Activation Method Using CH 3 OH/H 2 O Gas

이권재^†, 고재귀, 신재수¹

숭실대학교 물리학과
¹대전대학교 이과대학 전자재료과학과

Kwon-Jai Lee^†, Jae-Gui Koh, and Jae-Soo Shin¹

Department of Physics, Soongsil University, Seoul 156-743, Korea
¹Department of Electronic Materials Science, Daejoen University, Daejeon 300-716, Korea

E-mail:

The intensity is measured as functions of both distance from filament to substrate and CH 3 OH/( CH 3 OH+ H 2 O) ratio by OES(Optical Emission Spectroscopy) to investigate the effects of activation species such as H α , H β , H ΥC 3 , CH on diamond film growth. H α increases as CH 3 OH composition decreases, while CH increases as CH 3 OH composition increases. The intensity of H α decreases as the distance increases and that of CH increases as the distance increases. The intensities of other activation species of H β , H ΥC 3 , do not vary as a function of measured position distance. It varies randomly. It means that various parameters for depositing diamond thin film can be explained by the intensity(density) change of activation species, as a function of the distance of the filament.

Keywords:HFCVD method;diamond film;OES;H α;H β;H γ

[References]

Liao Y, Chang C, Li CH, Ye ZY, Wang GZ, Fang RC, Thin Solid Films, 368(2), 303 (2000)
Muranaka Y, Yamashita H, Sato K, Miyadera H, J. Appl. Phys., 67, 6247 (1990)
Matumoto S, J. Mater. Sci. Lett., 4, 600 (1985)
Matsumoto S, Hino M, Moriyoshi Y, Nagashima T, Tsutsmui, U. S. Patent 4767608 (1988) (1988)
Badziagm P, Verwoerd WS, Ellis WP, Greiner NR, Nature, 343, 244 (1990)
Hwang NM, Hahn JH, Yoon DY, J. Cryst. Growth, 160, 87 (1996)
Hwang NM, Bahng HW, Yoon DY, Diam. Relat. Mat., 1, 191 (1992)
Martin LR, Hill MW, Appl. Phys. Lett., 55, 2248 (1989)
Wahl EH, Owano TG, Kruger CH, Zalicki P, Ma Y, Zare RN, Diam. Relat. Mat., 5, 373 (1996)
Schafer L, Klages CP, Meier U, Kohse-Hoinhaus K, Appl. Phys. Lett., 58, 571 (1991)
Celii FG, Butler JE, Appl. Phys. Lett., 54, 1031 (1989)
Tsang RS, Rego CA, May PW, Ashfold MNR, Rosser KN, Diam. Relat. Mat., 6, 247 (1997)
Harris SJ, Weiner AM, Perry TA, Appl. Phys. Lett., 53, 1605 (1988)
Kawato T, Kanda K, Jpn. J. Appl. Phys., 26, 1429 (1987)
Frenklach M, Spear KE, J. Mater. Res., 3, 133 (1988)
Balestrino G, Marinell M, Milani E, Paoletti A, Paroli P, Printer I, Tebano A, Diam. Relat. Mat., 2, 389 (1993)
Barankova H, Bardos L, Bergr S, Diam. Relat. Mat., 2, 347 (1993)
Tsang RS, May PW, Ashfold MNR, Diam. Relat. Mat., 8, 242 (1999)
Matsui Y, Sahara M, Jpn. J. Appl. Phys., 28, 1023 (1989)
Lee KJ, Koh JG, Koh. J. Mater. Res., 11, 1024 (2001)
Flenklach M, J. Appl. Phys., 65, 5142 (1989)
Pandey KC, Phys. Rev. B, 25, 4338 (1992)

[1] Liao Y, Chang C, Li CH, Ye ZY, Wang GZ, Fang RC, Thin Solid Films, 368(2), 303 (2000)

[2] Muranaka Y, Yamashita H, Sato K, Miyadera H, J. Appl. Phys., 67, 6247 (1990)

[3] Matumoto S, J. Mater. Sci. Lett., 4, 600 (1985)

[4] Matsumoto S, Hino M, Moriyoshi Y, Nagashima T, Tsutsmui, U. S. Patent 4767608 (1988) (1988)

[5] Badziagm P, Verwoerd WS, Ellis WP, Greiner NR, Nature, 343, 244 (1990)

[6] Hwang NM, Hahn JH, Yoon DY, J. Cryst. Growth, 160, 87 (1996)

[7] Hwang NM, Bahng HW, Yoon DY, Diam. Relat. Mat., 1, 191 (1992)

[8] Martin LR, Hill MW, Appl. Phys. Lett., 55, 2248 (1989)

[9] Wahl EH, Owano TG, Kruger CH, Zalicki P, Ma Y, Zare RN, Diam. Relat. Mat., 5, 373 (1996)

[10] Schafer L, Klages CP, Meier U, Kohse-Hoinhaus K, Appl. Phys. Lett., 58, 571 (1991)

[11] Celii FG, Butler JE, Appl. Phys. Lett., 54, 1031 (1989)

[12] Tsang RS, Rego CA, May PW, Ashfold MNR, Rosser KN, Diam. Relat. Mat., 6, 247 (1997)

[13] Harris SJ, Weiner AM, Perry TA, Appl. Phys. Lett., 53, 1605 (1988)

[14] Kawato T, Kanda K, Jpn. J. Appl. Phys., 26, 1429 (1987)

[15] Frenklach M, Spear KE, J. Mater. Res., 3, 133 (1988)

[16] Balestrino G, Marinell M, Milani E, Paoletti A, Paroli P, Printer I, Tebano A, Diam. Relat. Mat., 2, 389 (1993)

[17] Barankova H, Bardos L, Bergr S, Diam. Relat. Mat., 2, 347 (1993)

[18] Tsang RS, May PW, Ashfold MNR, Diam. Relat. Mat., 8, 242 (1999)

[19] Matsui Y, Sahara M, Jpn. J. Appl. Phys., 28, 1023 (1989)

[20] Lee KJ, Koh JG, Koh. J. Mater. Res., 11, 1024 (2001)

[21] Flenklach M, J. Appl. Phys., 65, 5142 (1989)

[22] Pandey KC, Phys. Rev. B, 25, 4338 (1992)