As and BF 2 dopants are implanted for the formation of source/drain with dose of 1 × 10 15 ions/ cm 2 ∼5 × 10 15 ions/ cm 2 then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 μm CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in CoSi 2 n + and CoSi 2 p V , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in CoSi 2 n + and CoSi 2 p + . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in CoSi 2 n + , while little variation was observed in CoSi 2 p + . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of CoSi 2 n + / and CoSi 2 / p + , which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13 μm process.