Hot wall epitaxy방법에 의한 AgInS 2 박막의 성장과 광전류 특성

김혜숙; 홍광준; 정준우; 방진주; 김소형; 정태수; 박진성; H.S. Kim; K.J. Hong; J.W. Jeong; J.J. Bang; S.H. Kim; T.S. Jeong; J.S. Park

Korean Journal of Materials Research, Vol.12, No.7, 587-590, July, 2002

DOI10.3740/MRSK.2002.12.7.587 Export Citation

Hot wall epitaxy방법에 의한 AgInS 2 박막의 성장과 광전류 특성

Growth and Photocurrent Properties for the AgInS 2 Epilayers by Hot Wall Epitaxy

김혜숙^†, 홍광준¹, 정준우¹, 방진주¹, 김소형¹, 정태수², 박진성

나주대학 멀티미디어 정보
¹조선대학교 물리학과
²전북대학교 물리학과, 반도체 물성센터

H.S. Kim^†, K.J. Hong¹, J.W. Jeong¹, J.J. Bang¹, S.H. Kim¹, T.S. Jeong², and J.S. Park³

Multimedia Information, Naju collage, Korea
¹Department of Physics, Chosun University, Kwangju 501-759, Korea
²Department of Phusics and Semiconductor Physics Research Center(SPRC), Jeonbuk National University, Jeonbuk 560-756, Korea
³Department of metallurgical and Material Science Engineering, Chosun University, Kwangju, Korea

E-mail:

A silver indium sulfide ( AgInS 2 ) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown AgInS 2 epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of AgInS 2 was investigated by means of the photocurrent measurement. The crystal field splitting, Δ cr , and the spin orbit splitting, Δ so , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, E g (T), was determined.

Keywords:AgInS 2;hot wall epitaxy;photocurrent;valence band splitting;energy band

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[1] Joseph CM, Menon CS, Semicond. Sci. Technol., 11, 1668 (1996)

[2] Rincon C, Wasim SM, Marin S, Sanchez Perez G, Bacquet G, J. Appl. Phys., 82, 4500 (1997)

[3] Kanzari M, Rezig B, Semicond. Sci. Technol., 15, 335 (2000)

[4] Shay J1, Tell B, Kasper HM, Schiavone LM, Phys. Rev., 85, 5003 (1972)

[5] Shay JL, Kasper HM, Phys. Rev. Lett., 29, 1162 (1972)

[6] Jaffe JE, Zunger A, Phys. Rev. B, 29, 1882 (1984)

[7] Joshi NV, Martinez L, Echeverria R, J. Phys. Chem. Solids, 42, 281 (1981)

[8] Shay JL, Wernick JH, Ternary chalcopyrite semiconductors : growth, electronic properties, and applications, Pergamon, Oxford, 1975, Chap. 4 (1975)

[9] Gorska M, Reaulieu R, Loferski JJ, Roessler B, Thin Solid Films, 67, 341 (1980)

[10] Hattori K, Akamatsu K, Kamegashira N, J. Appl, Phys., 71, 3414 (1992)

[11] Lopez-Otero A, Thin Solid Films, 49, 3 (1987)

[12] Kim HS, Dr. Thesis, Kwangju, Chosun University, 1998 (1998)

[13] R.H. Photoconductivity of solids, Wiley, New York, 1969, p 391 (1969)

[14] Shay JL, Tell B, Schiavone LM, Kasper HM, Thiel F, Phys. Rev. B, 9, 1719 (1974)

[15] Okamoto K, Kinoshita K, Solid-State Electron., 19, 31 (1976)

[16] Smitt RA, Semiconductor, 2nd edition, Cambridge University, Cambridge, 1978, p 72 (1978)

[17] Varshni YP, Physica, 34, 149 (1967)

[18] Orlova NS, Turtsevich GA, Kochkarik OE, Phys. Status. Solidi. A, 118, 141 (1990)

[19] Shay JL, Tell B, Kasper HM, Schiavone LM, Phys. Rev. B, 7, 4485 (1973)

[20] Segall B, Marple DTF, In: M. Aven, J.S. Prener, edtors, Physics and chemistry of II-VI compounds, North-Holland, Amsterdam, 1967, Chap 7, p 345 (1967)