ALD법으로 제조된 Al 2 O 3 박막의 물리적 특성

김재범; 권덕렬; 오기영; 이종무; Jaebum Kim; Duk-Ryel Kwon; Ki-Young Oh; Chongmu Lee

Korean Journal of Materials Research, Vol.12, No.6, 493-498, June, 2002

DOI10.3740/MRSK.2002.12.6.493 Export Citation

ALD법으로 제조된 Al 2 O 3 박막의 물리적 특성

Physical Properties of the Al 2 O 3 Thin Films Deposited by Atomic Layer Deposition

김재범, 권덕렬, 오기영¹, 이종무 ^†

인하대학교 공과대학 재료공학부
¹주성엔지니어링

Jaebum Kim, Duk-Ryel Kwon, Ki-Young Oh¹, and Chongmu Lee^†

Department of Material Science and Engineering, Inha University, Incheon 402-751, Korea
¹Jusung Engineering Co. Ltd., Kyunggi-Do 464-890, Korea

E-mail:

Al 2 O 3 is a promising gate dielectric because of its high dielectric constant, high resistivity and low leakage current. Since OH ? radical in Al 2 O 3 films deposited by ALD using TMA and H 2 O degrades the good properties of Al 2 O 3 , TMA and O 3 were used to deposite Al 2 O 3 films and the effects of O 3 on the properties of the Al 2 O 3 films were investigated. The growth rate of the Al 2 O 3 film under the optimum condition was 0.85 \AA /cycle. According to the XPS analysis results the OH ? concentration in the Al 2 O 3 film deposited using O 3 is lower than that using H 2 O . RBS analysis results indicate the chemical formula of the film is Al 2.2 O 2.8 . The carbon concentration in the film detected by AES is under 1 at%. SEM observation confirms that the step coverage of the Al 2 O 3 film deposited by ALD using O 3 is nearly 100%.

Keywords:Atomic layer deposition;Al 2 O 3;Ozone(O 3 );XPS;Auger;RBS

[References]

Aboaf JA, J. Electrochem. Soc., 114, 948 (1967)
Abbott RA, Kamins TI, Solid State Technol., 24, 182 (1981)
Zaininger KH, Waxman AS, IEEE Trans. Electron Device, 16, 333 (1969)
Dorre E, Hubner H, Alumina, Springer, Berlin, (1984) (1984)
Yang WS, Kim YK, Yang SY, Choi JH, Park HS, Lee SI, Yoo JB, Surf. Coat. Technol., 131, 79 (2000)
Dossantos WN, Paulin PI, Taylor R, J. Eur. Ceram. Soc, 18(7), 807 (1998)
Ishida M, Sawada K, Yamaguchi S, Nakamura T, Suzaki T, Appl. Phys. Letts, 55, 56 (1989)
Fredriksson E, Carlson JO, J. Chem. Vapor Dep., 1, 33 (1993)
Rang CJ, Chun JS, Lee WJ, Thin Solid Films, 189, 161 (1990)
Ritala M, Saloniemi H, Leskela M, Prohaska T, Friedbacher G, Grasserbauer M, Thin Solid Films, 286(1-2), 54 (1996)
Kim Y, Lee SM, Park CS, Lee SI, Lee MY, Appl. Phys. Letts., 71, 3604 (1997)
Matero R, Rahtu A, Ritala M, Leskela M, Sajavaara T, Thin Solid Films, 368(1), 1 (2000)
Braun AE, Semiconductor International (October, 2001) (2001)
Shepard J, DEmic C, Kozlowski P, Chakrabarti A, Jammy R, Proceedings of the ALD Conference, Moterey, California, USA, May 14th 2001 (2001)
Higashi GS, Fleming CG, Appl. Phys. Letts, 55, 1963 (1989)
Ferguson JD, Weimer AW, George SM, Thin Solid Films, 371(1-2), 95 (2000)
Ott AW, Klaus JW, Johnson JM, George SM, Thin Solid Films, 292(1-2), 135 (1997)
Jusung Engineering Co, Ltd., in house R&D data (unpublished)
Hwang KH, Choi SJ, Lee JD, You YS, Kim YK, Kim HS, Song CL, Lee SI, ALD Symposium, Monterey, California, USA, 14th May, 2001 (2001)

[Related Articles]

[1] Aboaf JA, J. Electrochem. Soc., 114, 948 (1967)

[2] Abbott RA, Kamins TI, Solid State Technol., 24, 182 (1981)

[3] Zaininger KH, Waxman AS, IEEE Trans. Electron Device, 16, 333 (1969)

[4] Dorre E, Hubner H, Alumina, Springer, Berlin, (1984) (1984)

[5] Yang WS, Kim YK, Yang SY, Choi JH, Park HS, Lee SI, Yoo JB, Surf. Coat. Technol., 131, 79 (2000)

[6] Dossantos WN, Paulin PI, Taylor R, J. Eur. Ceram. Soc, 18(7), 807 (1998)

[7] Ishida M, Sawada K, Yamaguchi S, Nakamura T, Suzaki T, Appl. Phys. Letts, 55, 56 (1989)

[8] Fredriksson E, Carlson JO, J. Chem. Vapor Dep., 1, 33 (1993)

[9] Rang CJ, Chun JS, Lee WJ, Thin Solid Films, 189, 161 (1990)

[10] Ritala M, Saloniemi H, Leskela M, Prohaska T, Friedbacher G, Grasserbauer M, Thin Solid Films, 286(1-2), 54 (1996)

[11] Kim Y, Lee SM, Park CS, Lee SI, Lee MY, Appl. Phys. Letts., 71, 3604 (1997)

[12] Matero R, Rahtu A, Ritala M, Leskela M, Sajavaara T, Thin Solid Films, 368(1), 1 (2000)

[13] Braun AE, Semiconductor International (October, 2001) (2001)

[14] Shepard J, DEmic C, Kozlowski P, Chakrabarti A, Jammy R, Proceedings of the ALD Conference, Moterey, California, USA, May 14th 2001 (2001)

[15] Higashi GS, Fleming CG, Appl. Phys. Letts, 55, 1963 (1989)

[16] Ferguson JD, Weimer AW, George SM, Thin Solid Films, 371(1-2), 95 (2000)

[17] Ott AW, Klaus JW, Johnson JM, George SM, Thin Solid Films, 292(1-2), 135 (1997)

[18] Jusung Engineering Co, Ltd., in house R&D data (unpublished)

[19] Hwang KH, Choi SJ, Lee JD, You YS, Kim YK, Kim HS, Song CL, Lee SI, ALD Symposium, Monterey, California, USA, 14th May, 2001 (2001)