GaAs 나노입자 크기에 따른 SiO 2 혼합박막의 구조적 광학적 특성

이성훈; 김원목; 신동욱; 조성훈; 정병기; 이택성; 이경석; Sunghun Lee; Won Mok Kim; Dong Wook Shin; Sunghun Cho; Byung-ki Cheong; Taek Sung Lee; Kyeong Seok Lee

Korean Journal of Materials Research, Vol.12, No.4, 296-303, April, 2002

DOI10.3740/MRSK.2002.12.4.296 Export Citation

GaAs 나노입자 크기에 따른 SiO 2 혼합박막의 구조적 광학적 특성

The Structural and Optical Properties of GaAs- SiO 2 Composite Thin Films With Varying GaAs Nano-particle Size

이성훈^†, 김원목^{1, †}, 신동욱, 조성훈², 정병기¹, 이택성¹, 이경석¹

한양대학교 세라믹공학과
¹한국과학기술원 재료연구부
²아주대학교 분자과학기술학과

Sunghun Lee^†, Won Mok Kim^{1, †}, Dong Wook Shin, Sunghun Cho², Byung-ki Cheong¹, Taek Sung Lee¹, and Kyeong Seok Lee¹

Department of Ceramic Engineering, Hanyang University, Seoul 133-791, Korea
¹Materials Division, Korea Institute of Science and Technology, Seoul 136-791, Korea
²Department of Molecular Science and Technology, Ajou University, Suwon 442-794, Korea

E-mail:,

For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO 2 glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in SiO 2 matrix, the composite films were made to consist of alternating layers of GaAs and SiO 2 in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO 2 was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.

Keywords:Quantum Dots;Quantum Confinement;Optical Properties;Composite Thin Film

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[4] Shi W, Lin K, Lin X, J. Appl. Phys., 81(6), 2822 (1997)

[5] Lebens JA, Tsai CS, Vahala KJ, Appl. Phys. Lett., 56(26), 2642 (1990)

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