용액성장된 ZnS 박막의 표면형상 및 양자사이즈효과

이종원; 이상욱; 조성룡; 김선태; 박인용; 최용대; Jongwon Lee; Sangwook Lee; Sung Ryoung Cho; Seontai Kim; In Yong Park; Yong Dae Choi

Korean Journal of Materials Research, Vol.12, No.1, 36-43, January, 2002

DOI10.3740/MRSK.2002.12.1.036 Export Citation

용액성장된 ZnS 박막의 표면형상 및 양자사이즈효과

Surface Morphology and Quantum Size Effect of ZnS Thin Film Grown by Solution Growth Technique

이종원^†, 이상욱, 조성룡, 김선태, 박인용, 최용대¹

한밭대학교 신소재공학부
¹목원대학교 광전자물리학과

Jongwon Lee^†, Sangwook Lee, Sung Ryoung Cho, Seontai Kim, In Yong Park, and Yong Dae Choi¹

Department of Materials Engineering, Hanbat National University, Taejon 305-320, Korea
¹Department of Optical & Electronic Physics, Mokwon University, Taejon 302-729, Korea

E-mail:

In this study, the nanosized ZnS thin films that can be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their surface morphology and film thickness and grain size dependence on the growth conditions were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ( β -ZnS). With decreasing growth temperature and decreasing concentration of precursor solution, the surface morphology of film was found to be improved. Also, the film thickness depends largely on the ammonia concentration. In particular, this is the first time that the surface morphology dependence of ZnS film grown by SGT on the ammonia concentration is reported. The energy band gaps of samples were determined from the optical transmittance values, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS. It was also shown that the quantum size effect of SGT grown ZnS is larger than that of the ZnS films grown by most other growth techniques.

Keywords:ZnS;Solution Growth Technique;Growth Condition;Surface Morphology;Quantum Size Effect

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[3] Abounadi A, Diblasio M, Bouchara D, Phys. Rev., 850, 11677 (1994)

[4] Dona JM, Herrero J, J. Electrochem. Soc., 139, 2810 (1992)

[5] Steigerwald M, Brus LE, Annu. Rev. Mater. Sci., 19, 471 (1989)

[6] Alisatos AP, Harris AL, Levino NJ, Steigerwald ML, Brus LE, J. Chem. Phys., 89, 4001 (1988)

[7] Kaur I, Pandya DK, Chopra KL, J. Electrochem. Soc., 127, 943 (1980)

[8] Sebastian PJ, Campos J, Nair PK, Thin Solid Films, 227, 190 (1993)

[9] Ihanus J, Ritala M, Leskela M, Prohaska T, Appl. Surf. Sci., 120, 43 (1997)

[10] Landolt-Bornstein Series vol. 17, subvol. b, Springer-Verlag, Berline (1982) (1982)

[11] Chopra KL, Das SR, 'Thin Film Solar Cells', Plenum Press, New York (1983) (1983)

[12] Dona JM, Herrero J, J. Electrochem. Soc., 141(1), 205 (1994)

[13] Arenas OL, Nair MTS, Nair PK, Semicond. Sci. Tech., 12, 1323 (1997)

[14] Nair PK, Nair MTS, Garcia VM, Arenas OL, Pena Y, Castillo A, Ayala IT, Gomezdaza O, Sanchez A, Campos J, Hu H, Suarez R, Rincon ME, Sol. Energy Mater. Sol. Cells, 52(3), 313 (1998)

[15] Chuu DS, Dai CM, Phys. Rev. B, 45, 11805 (1992)

[16] Bassani F, Parravicini GP, 'Electronic States and Optical Transitions in Solids', Pergamon, Oxford (1975) (1975)

[17] Maruyama T, Kawakuchi T, Thin Solid Films, 188, 323 (1990)

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[19] Chen W, Wang Z, Lin Z, Lin L, J. Appl. Phys., 82, 3111 (1997)

[20] Mondal A, Chaudhuri TK, Prarnanik P, Sol. Energy Sol Cel, 7, 431 (1983)