화학공학소재연구정보센터
Chemical Physics Letters, Vol.615, 117-123, 2014
Theoretical study of intermolecular interactions in nanoporous-networks on boron doped silicon surface
Supramolecular networks on a doped boron silicon surface under ultra high vacuum (UHV) have been recently obtained (Makoudi et al., 2013). The used molecule contains different end-groups, bearing either bromine, iodine or hydrogen atoms denoted 1,3,5-tri(4 '-bromophenyl)benzene (TBB), 1,3,5-tri(4-iodophenyl)benzene (TIB) and 1,3,5-triphenyl-benzene (THB). To explain the formation of the nanoporous structures, interactions of the type aryl-X H hydrogen bonds (X being a halogen atom) have been proposed. In order to obtain a complete insight of the stabilizing interaction in these networks adsorbed on the Si(111)root 3x root 3R30 degrees-boron surface, we present a full density-functional-theory study taking the van der Waals interactions into account. We investigated the energetic and structural properties of three different nanoporous networks constituted by TBB, TIB and THB molecules. The electronic studies allow us to identify hydrogen bond and dipole-dipole intermolecular interactions in the supramolecular halogen networks, whereas only dipole-dipole interactions are present in the 1,3,5-triphenyl-benzene nanoporous network. (C) 2014 Elsevier B.V. All rights reserved.