In this paper, the impact of junction defect healing through thermal annealing in Ge n-metal-oxide-semiconductor field-effect transistors (MOSFETs) is thoroughly investigated. Germanium (Ge) is strongly affected by the presence of point defects within the crystal, which is the source of leakage current and low frequency noise. For MOSFET applications, these defects at the junction of the source and drain area are created by ion implantation. However, these can be significantly reduced by proper thermal treatment. Here, the effect of defect healing is investigated and presented through currente-voltage characteristics of a n(+)/p diode and MOSFET I-D-V-G measurement, and secondary ion mass spectroscopy (SIMS). (C) 2014 Elsevier B.V. All rights reserved.