반응성 스퍼터링으로 제조한 Ta2O5/Al2O3Ta 2 O 5 /Al 2 O 3  다충박막의 유전특성

최재훈; 오태성; Jae Hoon Choi; Tae Sung Oh

Korean Journal of Materials Research, Vol.11, No.12, 1080-1085, December, 2001

Export Citation

반응성 스퍼터링으로 제조한 Ta2O5/Al2O3Ta 2 O 5 /Al 2 O 3 다충박막의 유전특성

Dielectric Characteristics of the Ta 2 O 5 /Al 2 O 3 Multilayer Thin Films Processed by Reactive Sputtering

최재훈, 오태성^†

홍익대학교 공과대학 신소재공학과

Jae Hoon Choi, and Tae Sung Oh^†

Dept. of Metall. Eng. & Mater., Hongik University, Seoul 121-791, Korea

E-mail:

Dielectric properties and leakage current characteristics of 100 nm-thick Ta 2 O 5 /Al 2 O 3 multilayer thin films, which were fabricated by reactive sputtering of Al 2 O 3 and Ta 2 O 5 successively on top of each other for total 9 layers, have been investigated with variation of the Al 2 O 3 content (i.e,Ta 2 O 5 /Al 2 O 3 thicknessratio) . Ta 2 O 5 /Al 2 O 3 films were amorphous regardless of the Al 2 O 3 content. With increasing the Al 2 O 3 content from 0% to 100%, refractive index of the Ta 2 O 5 /Al 2 O 3 films decreased linearly from 2.03 to 1.56 and dielectric constant was lowered from 23.9 to 7.7 Variation of the dielectric constant with the Al 2 O 3 content was in good agreement with the behavior that was obtained by assuming parallel capacitors of Al 2 O 3 and Ta_2O_5.Leakagecurrentcharacteristicsof Ta_2O_5/Al_2O_3multilayerfilmsweresuperiortothoseof Ta_2O_5and Al_2O_3films. Ta_2O_5/Al_2O_3filmsof5 Al_2O_3contentexhibitedexcellentleakagecurrentdensitieswhichwerelowerthan 10^{-7} A/cm^2$ at 1MV/cm.

Keywords:Ta 2 O 5 /Al 2 O 3;multilayer;dielectric properties;leakage current

[References]

Shibata S, Thin Solid Films, 227, 1 (1996)
Mikhaelashvili V, Betzer Y, Prudnikov I, Orenstein M, Ritter D, Eisenstein G, J. Appl. Phys., 84, 6747 (1998)
Kim SH, Kim CE, Oh YJ, Thin Solid Films, 305(1-2), 321 (1997)
Yasumoto T, Yanase N, Abe K, Kawakubo T, Jpn. J. Appl. Phys., 39, 5369 (2000)
Hazumi S, Asano T, Hattori M, Nakashima H, Jpn. J. Appl. Phys., 34, 5086 (1995)
Zhang JY, Boyd IW, Appl. Phys. A, 70, 657 (2000)
Cho SD, Paik KW, Mater. Sci. Eng. B, 67, 108 (1999)
Gottmann J, Kreutz EW, Surf. Coat. Technol., 116, 1189 (1999)
Haanappel VAC, Vendel DVD, Metselaar HSC, van Corbach HD, Fransen T, Gellings PJ, Thin Solid Films, 254, 153 (1995)
Haanappel VAC, van Corbach HD, Fransen T, Gellings PJ, Surf. Coat. Technol., 72, 13 (1995)
Chiu F, Wang J, Lee JY, Wu SC, J. Appl. Phys., 81, 6911 (1997)
Ritala M, Saloniemi H, Leskela M, Prohaska T, Friedbacher G, Grasserbauer M, Thin Solid Films, 286(1-2), 54 (1996)
Isobe C, Saitoh M, Appl. Phys. Lett., 56, 907 (1990)
Kim JY, Bull. Kor. Ceram. Soc., 11, 138 (1996)
Jin Z, Kwok HS, Wong M, IEEE Electron Device Lett., 19, 502 (1998)
Alexandrov P, Koprinarove J, Todorov D, Vacuum, 47, 1333 (1996)
Koski K, Holsa J, Juliet P, Thin Solid Films, 339(1-2), 240 (1999)
Schneider JM, Sproul WD, Chia RWJ, Wong MS, Matthews A, Surf. Coat. Technol., 96, 262 (1997)
Patil PV, Bendale DM, Puri RK, Puri V, Thin Solid Films, 288(1-2), 120 (1996)
Kingery WD, Browen HK, Uhlmann DR, Introduction to Ceramics, 2nd ed., p. 947, Wiley, U.S.A. (1976) (1976)
Wolf S, Tauber RN, Silicon Processing for the VLSI Era Vol. 1, p. 220, Lattice Press, U.S.A, (1986) (1986)
Grard Segda B, Jacquet M, Caapera C, Baud G, Pierre Besse J, Nucl. Instr. and Meth. in Phys. Res. B, 170, 105 (2000)

[1] Shibata S, Thin Solid Films, 227, 1 (1996)

[2] Mikhaelashvili V, Betzer Y, Prudnikov I, Orenstein M, Ritter D, Eisenstein G, J. Appl. Phys., 84, 6747 (1998)

[3] Kim SH, Kim CE, Oh YJ, Thin Solid Films, 305(1-2), 321 (1997)

[4] Yasumoto T, Yanase N, Abe K, Kawakubo T, Jpn. J. Appl. Phys., 39, 5369 (2000)

[5] Hazumi S, Asano T, Hattori M, Nakashima H, Jpn. J. Appl. Phys., 34, 5086 (1995)

[6] Zhang JY, Boyd IW, Appl. Phys. A, 70, 657 (2000)

[7] Cho SD, Paik KW, Mater. Sci. Eng. B, 67, 108 (1999)

[8] Gottmann J, Kreutz EW, Surf. Coat. Technol., 116, 1189 (1999)

[9] Haanappel VAC, Vendel DVD, Metselaar HSC, van Corbach HD, Fransen T, Gellings PJ, Thin Solid Films, 254, 153 (1995)

[10] Haanappel VAC, van Corbach HD, Fransen T, Gellings PJ, Surf. Coat. Technol., 72, 13 (1995)

[11] Chiu F, Wang J, Lee JY, Wu SC, J. Appl. Phys., 81, 6911 (1997)

[12] Ritala M, Saloniemi H, Leskela M, Prohaska T, Friedbacher G, Grasserbauer M, Thin Solid Films, 286(1-2), 54 (1996)

[13] Isobe C, Saitoh M, Appl. Phys. Lett., 56, 907 (1990)

[14] Kim JY, Bull. Kor. Ceram. Soc., 11, 138 (1996)

[15] Jin Z, Kwok HS, Wong M, IEEE Electron Device Lett., 19, 502 (1998)

[16] Alexandrov P, Koprinarove J, Todorov D, Vacuum, 47, 1333 (1996)

[17] Koski K, Holsa J, Juliet P, Thin Solid Films, 339(1-2), 240 (1999)

[18] Schneider JM, Sproul WD, Chia RWJ, Wong MS, Matthews A, Surf. Coat. Technol., 96, 262 (1997)

[19] Patil PV, Bendale DM, Puri RK, Puri V, Thin Solid Films, 288(1-2), 120 (1996)

[20] Kingery WD, Browen HK, Uhlmann DR, Introduction to Ceramics, 2nd ed., p. 947, Wiley, U.S.A. (1976) (1976)

[21] Wolf S, Tauber RN, Silicon Processing for the VLSI Era Vol. 1, p. 220, Lattice Press, U.S.A, (1986) (1986)

[22] Grard Segda B, Jacquet M, Caapera C, Baud G, Pierre Besse J, Nucl. Instr. and Meth. in Phys. Res. B, 170, 105 (2000)