An interesting nickel oxide (NiO) thin film-based hydrogen sensor device, prepared by a low-powered (50 W) radio-frequency (RP) sputtering process, is studied and demonstrated. The studied device shows improved performance including a very high hydrogen sensing response ratio (416 (Delta R/R)), an extremely low detecting limit (<50 ppm H-2/air), a high sensing response speed (7 s), a lower operating temperature (<= 350 degrees C) and a widespread sensing range of hydrogen concentration (50-10,000 ppm H-2/air). In addition, the device demonstrates benefits of low cost, easy fabrication and chemical stability. Based on these advantages, therefore, the studied NiO thin film sensor device shows promise for high-performance hydrogen sensing applications. Copyright (C) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.