Journal of Electroanalytical Chemistry, Vol.453, No.1-2, 129-137, 1998
Electrochemical characterisation of a semiconductor-metal junction : n-type InP vertical bar Cu; influence of the structure of the metallic layer
Copper electrodeposition was performed on an n-type InP electrode at two different potentials : -0.55 and -0.90 V (MSE). For each deposition potential value, the compactness of the deposit is discussed, on the basis of SEM observations and line profile analysis of the surface of the coated electrode. A clear difference in the morphology of the layer appeared and a more homogeneous film was observed, when the deposition was performed in the higher overpotential conditions (at - 0.9 V). Copper deposits obtained in an acidic solution were then reoxidized in an alkaline medium (10(-2) M KOH), and two different voltammograms could be observed for a given copper amount depending on the initial deposition potential. This difference poses the problem of the nature of the path of the interfacial charge transfer on a semiconducting InP sample with homogeneous or heterogeneous copper coverage.