Journal of Crystal Growth, Vol.406, 59-67, 2014
Thin interface analysis of a phase-field model for epitaxial growth with nucleation and Ehrlich-Schwoebel effects
In this paper, we perform thin interface analysis of a quantitative phase field model for epitaxial growth where nucleation and the Ehrlich-Schwoebel barrier have been considered. Results show that once the nucleation term is introduced into the phase-held model, modification must be carried out to get rid of the extrinsic "kinetic nucleation effect". While in the ES effect, the asymmetric diffusivity accounts for an irrational step motion that leads the model to deviate from the sharp-interface approximation, hence another modification for the attachment time should be carried. Attributed to these modifications, the phase-held model is more quantitative in describing step how dynamics in the sharp-interface limit, as well as exhibiting the more convergence of the steady-state velocity with respect to the step width for larger scale simulations. Our analysis and modifications explore the quantitative linking between atom motions and step dynamics. (C) 2014 Elsevier B.V. All rights reserved.
Keywords:Computer simulation;Nucleation;Growth models;Interfaces;Atomic layer epitaxy;Molecular beam cpitaxy