Journal of Crystal Growth, Vol.407, 11-16, 2014
Growth of nonpolar ZnO Films on (100) beta-LiGaO2 substrate by molecular beam epitaxy
Nonpolar m-plane (1 (1) over bar 00) ZnO epitaxial films were grown on (100) beta-LiGaO2 (LGO) substrates by plasma assisted molecular beam epitaxy (PAMBE). The dependence of growth characteristics on the growth temperatures was investigated. The surface morphologies of ZnO films were characterized by scanning electron microscopy and atomic force microscopy. Furthermore, the structural properties characterized by high resolution X-ray diffraction (HRXRD) indicated that the ZnO epilayers were grown in the nonpolar [1 (1) over bar 00] orientation. Detailed structural characterization and defect analysis of nonpolar ZnO epilayer on beta-LiGaO2 substrate were studied by transmission electron microscope (TEM). Optical properties of m-plane ZnO films were investigated by Raman spectroscopy and photoluminescence analyses. (C) 2014 Elsevier B.V. All rights reserved.
Keywords:X-ray diffraction;Atomic layer epitaxy;Molecular beam epitaxy;Zinc compound;Semiconducting II-VI materials