Journal of Crystal Growth, Vol.411, 34-37, 2015
Compositional homogeneity and X-ray topographic analyses of CdTexSe1-x grown by the vertical Bridgman technique
We grew CdTexSe1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS' X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTexSe1-x crystals. We noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks. Published by Elsevier B.V.
Keywords:Characterization;Defects;Te-inclusions;Subgrain boundary;CdTeSe;Semiconducting II-VI materials