Indium monotelluride (InTe) crystals were grown from vapour phase under different temperature gradients by employing physical vapour deposition (PVD) method. The morphology of these crystals such as whiskers, needles, platelets etc., strongly depends on the temperature distribution in the horizontal dual zone furnace. InTe platelets were deposited by setting the temperature of the charge (T-C) and growth (T-S) zones at 1073 K and 773 K (Delta T=300 K), respectively, for different growth periods (24 h, 48 h, 72 h and 96 h). The surface growth features have been analyzed by scanning electron microscopes, which indicate layer growth mechanism for all the crystals. Various crystals grown under Delta T=200 K and 300 K (retaining T-S invariant) were examined by X-ray diffraction and elemental analysis. InTe samples exhibited consistent lattice parameters, density and atomic percentage, establishing stoichiometry and chemical homogeneity. The results obtained for Seebeck coefficient, electrical conductivity, power factor, dislocation density and microhardness are found to be reproducible as well. The vapour deposited InTe platelets are mechanically stable and possess high value of TEP, which ensure their practical application in thermoelectric power generation. (C) 2014 Elsevier B.V. All rights reserved