We report. the MOVPE growth of high-performance AlN/GaN MISHEMTs using regrown n-Lype GaN (n-GaN) as source/drain (S/D) and in situ SiNx as gate dielectric. The n-GaN S/D and in situ SiNx were investigated for minimizing on-resistance and suppressing gate leakage current, respectively. The results showed that a two-step Si doping profile for the n-GaN greatly reduced the access resistance, and small gate leakage as well as low trap state density were achieved with the in situ SiNx gate dielectric. The fabricated 0.33 mu m-gated MISHEMT exhibited a maximum drain current density of 1550 mA/mm and an on/off current ratio over 10(7). (C) 2014 Elsevier B.V. All rights reserved.