An evaporation-deposition method has been employed to grow wurtzite Ga-doped ZnS micro- and nanostructures with different morphologies. The main structures obtained are pyramids, diamond-like crystals, plates, pencil-like and triangular cross-section wires. The influence of Ga doping has been studied by cathodoluminescence, photoluminescence and Raman spectroscopy. The luminescence behaviour is found to depend on the growth conditions and dopant incorporation. In pyramids and diamonds, the dopant incorporation produces a blue-shift of the defect-related emission, associated with the apparition of a 3.0 eV band related to Ga defects. For plates, pencil-like and triangular wires the major changes seem to be associated to the kind and polarity of the face under study, rather than to the Ga content in the precursor.