Manganese-doped tin oxide (SnO2:Mn) thin films were deposited on glass substrates by the sol-gel dip coating technique. The effect on structural, morphological, magnetic, electrical, and optical properties in the films with different Mn concentrations (0-5mol%) were investigated. X-ray diffraction patterns (XRD) showed the deterioration of crystallinity with increase in Mn-doping concentration. Scanning electron microscopy (SEM) studies showed an inhibition of grain growth with an increase in Mn concentration. X ray photoelectron spectroscopy (XPS) revealed the presence of Sn4+ and Mn3+ in SnO2: Mn films. SnO2: Mn films show ferromagnetic and paramagnetic behavior. These SnO2:Mn films acquire n-type conductivity for 0-3mol% (SnO2 - Sn(0.97)Mn(0.03)O(2) -)doping concentration and p type for 5mol% Mn-doping concentration(Sn0.95Mn0.05O2) in SnO2 films. An average transmittance of > 75% (in UV-Vis region) was observed for all the SnO2:Mn films. Optical band gap energy of SnO2: Mn films were found to vary in the range 3.55 to 3.71eV with the increase in Mn-doping concentration. Photoluminescence (PL) spectra of the films exhibited an increase in the emission intensity with increase in Mn-doping concentration which may be due to structural defects or luminescent centers, such as nanocrystals and defects in the SnO2. Such SnO2:Mn films with structural, magnetic and optical properties can be used as dilute magnetic semiconductors.