Highly c-axis oriented Bi2-xEuxVO5.5 (x = 0, 0.05, 0.10, 0.15, and 0.20) thin films were prepared on Pt(111)/Ti/SiO2/Si and fused silica substrates by using chemical solution deposition method, and characterized by X-ray diffraction, scanning electron microscopy, and optical and electrical measurements. Under 356 nm UV irradiation, a bright red photoluminescence can be observed in the thin films with x = 0.10, 0.15, and 0.20. The emission spectra included two strong peaks which originated from D-5(0) -> F-7(1) (595 nm) and D-5(0) -> F-7(2) (619 nm) transitions of Eu3+ ions. With increasing Eu3+-doping content x, the dielectric dispersion weakened, and dielectric loss decreased. Eu3+ doping can also decrease the leakage current of the thin films. These results demonstrate that Bi2-xEuxVO5.5 thin films are a kind of multifunctional material with potential applications in luminescent ferroelectric devices. (C) 2014 Elsevier B.V. All rights reserved.