Preferentially {100}-oriented thin films of lead lanthanum zirconate titanate, (Pb1-xLax) (Zr0.65Ti0.35)(1-x/4)O-3[PLZT(x/65/35)] with compositions near the morphotropic phase boundary (MPB) were prepared on silicon substrates (111)Pt/Ti/SiO2/Si by sol-gel spin coating technique. The structural, micro structural and electrical characteristics have been studied as a function of thin film composition. Crystalline orientation and microstructure of the thin films have been determined by X-ray diffraction, Scanning electron microscopy, respectively. The transverse piezoelectric coefficient, e(31)* of the PLZT thin films have been evaluated by tip deflection of unimorph cantilevers. The influence of thin film composition on e(31)* have been determined. PLZT (7/65/35) thin film exhibited the optimum dielectric and piezoelectric characteristics with a dielectric permittivity, epsilon(r) = 917; dielectric loss, tan delta = 0.03 and average e(31)* = -4.2 C/m(2). (C) 2014 Elsevier B.V. All rights reserved.