In this paper, metal-induced crystallization (MIC) phenomenon on alpha-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 degrees C and 400 degrees C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 degrees C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains. (C) 2014 Elsevier Ltd. All rights reserved.