Sb-doped SnO2 (ATO) nanostructured thin films were prepared by using radio frequency magnetron sputtering at the substrate temperatures of 25 degrees C, 100 degrees C and 200 degrees C, respectively. All the ATO thin films have the similar redox characteristics in the cyclic voltammetry measurements. The ATO thin film sputtered at 200 degrees C shows the lowest charge transfer resistance and best electrochemical performance, and has a high reversible capacity of 679 mAh g(-1) at 100 mAg(-1) after 200 charge-discharge cycles and high rate performance of 483 mA h g(-1) at 800 mAg(-1). The electrochemical mechanisms were investigated by analyzing the phase evolution of the ATO electrodes that had been electrochemically induced at various stages. The results reveal that the ATO underwent reversible lithiation/delithiation processes during the electrochemical cycles, i.e., the SnO2 reacted with Li+ to produce metallic Sn and followed by the formation of the LixSn alloys during discharge process, and then LixSn alloys de-alloyed, Sn reacted with Li2O, and even partially formed SnO2 during charge process. (C) 2014 Elsevier Ltd. All rights reserved.