졸-겔법으로 성장시킨 바나듐이 도핑된 Bi 4 Ti 3 O 12   박막의 미세구조 및 전기적 특성

김종국; 김상수; 최은경; 김진흥; 송태권; 김인성; Jong-Guk Kim; Sang-Su Kim; Eun-Gyeong Choe; Jin-Heung Kim; Tae-Gwon Song; In-Seong Kim

Korean Journal of Materials Research, Vol.11, No.11, 960-964, November, 2001

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졸-겔법으로 성장시킨 바나듐이 도핑된 Bi 4 Ti 3 O 12 박막의 미세구조 및 전기적 특성

Microstructure and Electrical Properties of Vanadium-doped Bi 4 Ti 3 O 12 Thin Films Prepared by Sol-gel Method

김종국¹, 김상수^{2, †}, 최은경², 김진흥^{1, 3}, 송태권^{1, 4}, 김인성⁵

¹기초과학연구소
²창원대학교 물리학과
³화공시스템공학과
⁴세라믹공학과
⁵한국기계연구원 전기재료부

Jong-Guk Kim¹, Sang-Su Kim^{2, †}, Eun-Gyeong Choe², Jin-Heung Kim^{1, 3}, Tae-Gwon Song^{1, 4}, and In-Seong Kim⁵

¹Institute of Basic Science, Korea
²Department of Physcis, Changwon National University, Korea
³Department of Chemical Engineering,
⁴Department of Ceramic Science and Engineering, Changwon National University, Kyungnam 641-773
⁵Division of Electrical Materials, Korea Electrotechnology Research Institute, Changwon, Kyungnam 641-600, Korea

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Bi 3.99 Ti 2.97 V 0.03 O 12 (BTV) thin films with 3 mol% vanadium doping were Prepared on Pt/Ti/SiO 2 /Si substrate by sol-gel method. X-ray diffraction analysis indicated that single-phase layered perovskite were obtained and preferred orientation was not observed. Under the annealing temperature at 600 ? C , the surface morphology of the BTV thin films had fine-rounded particles and then changed plate-like at 650 ? C and 700 ? C . The remanent polarization (2P r ) and coercive field (2E c ) of 700 ? C annealed BTV thin film were 25 μ C/cm 2 and 116 kV/cm, respectively. In addition, BTV thin film showed little polarization fatigue during 10 9 switching cycles. These improved ferroelectric properties were attributed to the increased rattling space and reduced oxygen vacancies by substitution Ti 4+ ion (68 pm) with smaller V 5+ ion (59 pm). The dielectric constant and loss were measured 130 and 0.03 at 10 kHz, respectively.

Keywords:thin films;vanadium doping;sol-gel;fatigue

[References]

Forbess MJ, Seraji S, Wu Y, Nguyen CP, Cao GZ, Appl. Phys. Lett., 76, 2934 (2000)
Mihara T, Watanabe H, Paz de Araujo CA, Jpn. J. Appl. Phys., 32, 4168 (1993)
Kuiker HM, Cuchiaro PD, McMillan LD, Jpn. J. Appl. Phys., 68, 5787 (1990)
Watanabe H, Mihara T, Jpn. J. Appl. Phys., 34, 5240 (1995)
Al-Shareef HN, Dimos D, Boyel TJ, Warren WL, Tuttle BA, Appl. Phys. Lett., 68, 690 (1995)
Boyle TJ, Buchheit CD, Rodriguez MA, Al-Shareef HN, Hernandez BA, Scott B, Ziller JW, J. Mater. Res., 11, 2274 (1996)
Gu H, Dong C, Chen P, Bao D, Kuang A, Li X, J. Crystal Growth, 186, 403 (1998)
Du X, Chen I, J. Am. Ceram. Soc., 81, 3253 (1998)
Cummins SE, Cross LE, J. Appl. Phys., 39, 2268 (1968)
Park BH, Kang BS, Bu SD, Noh TW, Lee J, Jo W, Nature, 401, 682 (1999)
Noguchi Y, Miyayama M, Appl. Phys. Lett., 78, 1903 (2001)
Wu Y, Cao GZ, J. Mater. Sci. Lett., 19(4), 267 (2000)
Warren WL, Tuttle BA, Dimos D, Appl. Phys. Lett., 67, 1426 (1995)
Dimos D, Al-Shareef HN, Warren WL, Tuttle BA, J. Appl. Phys., 80, 1682 (1996)
Park BH, Hyun SJ, Bu SD, Noh TW, Appl. Phys. Lett., 74, 1907 (1999)
Friessnegg T, Aggarwal S, Ramesh R, Nielsen B, Poindexter EH, Keeble DJ, Appl. Phys. Lett., 77, 127 (2000)
Waser R, Baiatu T, Hardtl KH, J. Am. Ceram. Soc., 73, 1645 (1990)

[Referenced By]

[1] Forbess MJ, Seraji S, Wu Y, Nguyen CP, Cao GZ, Appl. Phys. Lett., 76, 2934 (2000)

[2] Mihara T, Watanabe H, Paz de Araujo CA, Jpn. J. Appl. Phys., 32, 4168 (1993)

[3] Kuiker HM, Cuchiaro PD, McMillan LD, Jpn. J. Appl. Phys., 68, 5787 (1990)

[4] Watanabe H, Mihara T, Jpn. J. Appl. Phys., 34, 5240 (1995)

[5] Al-Shareef HN, Dimos D, Boyel TJ, Warren WL, Tuttle BA, Appl. Phys. Lett., 68, 690 (1995)

[6] Boyle TJ, Buchheit CD, Rodriguez MA, Al-Shareef HN, Hernandez BA, Scott B, Ziller JW, J. Mater. Res., 11, 2274 (1996)

[7] Gu H, Dong C, Chen P, Bao D, Kuang A, Li X, J. Crystal Growth, 186, 403 (1998)

[8] Du X, Chen I, J. Am. Ceram. Soc., 81, 3253 (1998)

[9] Cummins SE, Cross LE, J. Appl. Phys., 39, 2268 (1968)

[10] Park BH, Kang BS, Bu SD, Noh TW, Lee J, Jo W, Nature, 401, 682 (1999)

[11] Noguchi Y, Miyayama M, Appl. Phys. Lett., 78, 1903 (2001)

[12] Wu Y, Cao GZ, J. Mater. Sci. Lett., 19(4), 267 (2000)

[13] Warren WL, Tuttle BA, Dimos D, Appl. Phys. Lett., 67, 1426 (1995)

[14] Dimos D, Al-Shareef HN, Warren WL, Tuttle BA, J. Appl. Phys., 80, 1682 (1996)

[15] Park BH, Hyun SJ, Bu SD, Noh TW, Appl. Phys. Lett., 74, 1907 (1999)

[16] Friessnegg T, Aggarwal S, Ramesh R, Nielsen B, Poindexter EH, Keeble DJ, Appl. Phys. Lett., 77, 127 (2000)

[17] Waser R, Baiatu T, Hardtl KH, J. Am. Ceram. Soc., 73, 1645 (1990)