2wt% Al 2 O 3 ?doped ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55 0 ? C . The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in N 2 (N-AZO) and H 2 (H-AZO) at the temperature of 600 ? C ~ 1000 ? C through rapid thermal annealing. After annealed at 800 ? C , N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at 900 ? C shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After 600 ? C annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the H 2 passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to V Zn , from Zn i , to valence band maximum (V BM ) and from V_{o} to V_BM} , respectively.