Performance of InxGa1_N-x photo-electrodes at concentrations of In ranging from 0 to 100 % was investigated in basic and acidic solutions under 1 Sun illumination. Photocorrosive effects of InxGa1-xN samples in aqueous solutions are revealed and strategies for a more efficient use of these electrodes are discussed. Formation of Ga2O3 phase and N-2 under photoanodic conditions can explain the photocorrosive effect. It is shown that the product of charge carrier density and mobility, n x mu, scales with the photo-current density in GaN. (C)2014 Elsevier B.V. All rights reserved.