화학공학소재연구정보센터
Solar Energy Materials and Solar Cells, Vol.130, 481-489, 2014
Enhanced light-scattering properties of sputtered Ag/Al:Si bilayers deposited at a low substrate temperature - A potential back reflector for highly efficient flexible thin-film photovoltaic devices
Nanotextured Ag/Al:Si back reflectors with enhanced light-scattering efficiency for flexible thin-film solar cells were developed at a low substrate temperature (T-s) by sophisticated control of the microstructural evolution of metal films. Development was based on a structure zone model and a bilayer concept involving a high reflectivity Ag top layer deposited onto a surface-textured Al:Si bottom layer. The texture evolution with a root-mean-square (sigma(rms)) surface roughness of 60.1 nm in the Al:Si bottom layer was successfully achieved at a low T-s of 100 degrees C by abnormal grain growth. The growth was induced by the low melting point of Al and the impurity drag effect on the grain boundaries caused by the Si dopant, whereas the sigma(rms) of the pure Ag film deposited at T-s=200 degrees C was 46.9 nm. After room temperature deposition of highly reflective Ag films onto the nanotextured Al:Si bottom layers, significant improvement in the light-scattering properties of the Ag/Al:Si bilayers was obtained compared to the Al:Si films without Ag films, for which the reflection significantly decreased due to the interband absorption and low reflectivity of Al. Under optimum conditions, the light-scattering efficiency of nanotextured Ag/Al:Si bilayers deposited at T-s=75 degrees C is comparable to that of reference Ag films at T-s=200 degrees C. When the nanotextured Ag/Al:Si bilayers deposited at Ts=75 degrees C as back reflectors were applied to flexible nc-Si:H thin-film solar cells, a high conversion efficiency of 8.6% was successfully achieved, and no detrimental reduction in cell performance was observed in comparison with the solar cell using the reference Ag back reflectors deposited at 200 degrees C. (C) 2014 Elsevier B.V. All rights reserved.