High quality epitaxial crystalline Cu(In,Ga)Se-2 (CIGS) films were grown on n-type (1 0 0)-Germanium (Ge) substrates using pulsed electron deposition (PED) technique at a remarkably low substrate temperature of 300 degrees C, thanks to the high-energy of adatoms arriving to the substrate. The crystalline quality was confirmed by X-ray diffraction techniques and from Transmission Electron Microscopy and the only defects found were twin boundaries along the (1 1 2) direction in these CIGS films; surprisingly neither misfit dislocations nor Kinkerdall voids were observed. A 100 meV optical band located below the band edge was observed by Photoluminescence technique. Current-voltage and capacitance-voltage measurements confirm an intrinsic p-type conductivity of CIGS films, with a free carrier concentration of approximate to 3.5 x 10(16) cm(-3). These characteristics of crystalline CIGS films are crucial for a variety of potential applications, such as more efficient absorber layers in single-junction and as an integral component of multi-junction thin-film solar cells. (C) 2014 Elsevier B.V. All rights reserved.