In this paper, we propose an original Flash-type structure, integrating microbatteries in the circuitry to localize the stored charge over a thick oxide during the retention phase and thus improving this key reliability criterion. We first describe the proposed architecture using two lateral gates and different programming and erasing schemes. Then we develop a full TCAD simulation of our structure showing the feasibility of this cell with a viable 3.2 V programming window before process optimization. Moreover, through recent advances in micro-nanobatteries, we demonstrate that we are able to integrate them in the circuitry to maintain 10 Gbytes worth of data for more than ten years. (C) 2014 Elsevier Ltd. All rights reserved.