We present a method to calculate the carrier mobility in MOSFET's and charge trap, nonvolatile semiconductor memories (NVSMs) with a two terminal structure. The method employs a 'gridded' capacitor to supply minority carriers, thereby, alleviating the need to fabricate a transistor with source/drain contacts. Capacitance and conductance measurements are employed to extract carrier mobility. Although this approach is applied to silicon, the method is versatile and can be employed on other materials. (C) 2014 Elsevier Ltd. All rights reserved.