Solid-State Electronics, Vol.103, 40-43, 2015
Comparison of electron-phonon and hole-phonon energy loss rates in silicon
The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate over an identical temperature range. (C) 2014 Elsevier Ltd. All rights reserved.