In this paper, integration of crystalline orientated gamma-Al2O3 films and complementary metal-oxide- semiconductor (CMOS) circuits on Si(1 00) substrate was reported. In this integration processes, crystalline gamma-Al2O3 films need to be preserved their crystallinity during high temperature annealing processes of CMOS fabrication in order to prevent surface condition changes. The gamma-Al2O3 films grown on Si substrates are annealed in the CMOS fabrication process conditions, drive-in annealing at 1150 degrees C in O-2 atmosphere and wet annealing 1000 degrees C in H2O vapor atmosphere. Reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD) were used to characterize the crystallinity of gamma-Al2O3 films after the annealing processes. Surface conditions of the films are analyzed and observed with X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). As a result, RHEED patterns of the gamma-Al2O3 films indicated that wet oxidation annealing was a critical process severally inferior surface condition of crystalline gamma-Al2O3 films. XRD, XPS, and SEM investigation unveiled further details of the crystallinity changes on gamma-Al2O3 films for each process. These results indicated passivation films were required to integrate gamma-Al2O3 films with CMOS fabrication process. Therefore we proposed and introduced Si3N4/TEOS passivation films on gamma-Al2O3 films in CMOS fabrication processes. At last, MOSFETs on gamma-Al2O3 integrated Si(1 00) substrate were fabricated and characterized. The designed characteristics of MOSFETs were obtained on gamma-Al2O3 integrated Si substrate. (C) 2014 Elsevier Ltd. All rights reserved.