High-kappa Nd2O3 and NdTiO3 films deposited on polycrystalline silicon treated at various post-rapid thermal annealing temperatureswere fabricated as high-kappa gate dielectrics. The NdTiO3 samples demonstrated a higher effective dielectric constant, lower leakage current, higher breakdown electric field, smaller gate voltage shift, and lower electron trapping rate than the high-kappa Nd2O3 polyoxide dielectric samples. Annealing effects were analyzed using electrical measurements and multiple material analysis techniques included X-ray diffraction and atomic forcemicroscopy. Incorporating Ti content into Nd2O3 dielectrics resulted in noticeable improvements in electrical performance andmaterial quality. Results indicate that NdTiO3 dielectrics showpromise for future high-kappa dielectric electronic device applications. (C) 2014 Elsevier B. V. All rights reserved.