In this study, high-K MoTiO5 dielectrics were applied as charge trapping layers in fabricated metal-oxide-high-K MoTiO5-oxide-Si-type memory devices. Among the applied MoTiO5 trapping layer treatment conditions, annealing at 900 degrees C yielded devices that exhibited superior memory performance, such as a larger memory window and faster programming/erasing speed. Multiple material analyses, namely X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, confirmed that annealing at 900 degrees C can improve the material quality as a result of crystallization. The fabricated MoTiO5-based memory devices show potential for future commercial memory device applications. (C) 2014 Elsevier B.V. All rights reserved.