Differential scanning calorimetry was used to study the non-isothermal crystallization behavior of selenium-tellurium thin films within the 0-30 at.% Te compositional range. The non-isothermal crystallization kinetics were described in terms of the Johnson-Mehl-Avrami nucleation-growth model. The apparent activation energy of crystallization was found to exhibit a step-like compositional behavior, with E changing from similar to 115 to similar to 145 kJ.mol(-1) in the 10-15 at.% Te range. Two-dimensional growth of crystallites, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. However, in the case of the Se70Te30 thin film, indications of three-dimensional crystal growth were found at high heating rates. This corresponds to the previously reported behavior of Se-Te chalcogenide matrices, where the addition of tellurium leads to the formation of smaller, volume-located crystallites. (C) 2014 Elsevier B.V. All rights reserved.