Hot wire CVD (HWCVD) and initiated CVD (iCVD) are very well suited deposition techniques for the fabrication of transparent thin film gas barriers. Single inorganic or organic layers, however, face challenges, which are hard to overcome: unavoidable defects and low intrinsic barrier function. We demonstrate that by combining inorganic HWCVD films and organic iCVD films, a water vapor transmission rate a low as 5 * 10(-6) g/m(2)/day at 60 degrees C and 90% RH for a simple pinhole free three layer structure is obtained even with non-optimized individual layers. Given the 100 degrees C deposition temperature, the layer stacks can be deposited on any sensitive electronic device. (C) 2014 Elsevier B.V. All rights reserved.