We have discovered that phosphorus (P) atoms can be doped into crystalline silicon (c-Si) at temperatures below 350 degrees C or even at 80 degrees C by using species generated by catalytic cracking reaction of phosphine (PH3) molecules with heated tungsten (W) catalyzer in Cat-CVD apparatus. As further investigation, here, we study the feasibility of low temperature doping of boron (B) atoms into c-Si by using decomposed species generated similarly from diborane (B2H6) molecules. Dependency of properties of doped layers on catalyzer temperature (T-cat) and substrate temperature (T-s) is studied by both the Van der Pauw method based on the Hall-effect measurements and secondary ion mass spectroscopy (SIMS) for B doping in addition to P doping. It is found that, similarly to P doping, the surface of n-type c-Si is converted to p-type even at T-s = 80 degrees C for Tcat over 800 degrees C when c-Si is exposed to B2H6 cracked species for a few minutes, and that the heat of substrate over 300 degrees C is likely to help for B doping contrary to P doping. (C) 2014 Published by Elsevier B.V.