쵸크랄스키 Silicon 단결정의 Large Pit과 Flow Pattern defect의 열적 거동과 Large Pit의 소자 수율에의 영향

송영민; 문영희; 조기현; 김종오; Young M SONG; Young-hee Mun; Ki Hyun CHO; Chong-Oh KIM

Korean Journal of Materials Research, Vol.11, No.9, 781-785, September, 2001

Thermal Behavior of Flow Pattern Defect and Large Pit in Czochralski Silicon Crystals and Effects of Large Pit upon Device Yield

송영민^{1, 2, †}, 문영희¹, 조기현², 김종오¹

¹충남대학교 공과대학 재료공학과
²LG Siltron

Young M SONG^{1, 2, †}, Young-hee Mun¹, Ki Hyun CHO³, and Chong-Oh KIM¹

¹Department of Materials Engineering, Chungnam National University, Taejon 305-764, Korea
²LG Siltron Inc., #274 Imsoodong, Gumi Kyungpuk, 790-350
³LG Siltron Inc., #274 Imsoodong, Gumi Kyungpuk, 790-350, Korea

E-mail:

The thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystal was investigated by applying high temperature annealing ( ≥ 1100 ? C ) and non-agitated Secco etching. For evaluation of the effect of LP upon device performance/yield, commercial DRAM and ASIC devices were fabricated. The results indicated that high temperature annealing generates LPs whereas it decreases FPD density drastically. However, the origins of FPD and LP seemed to be quite different by not showing any correspondence to their density and the location of LP generation and FPD extinction. By not showing any difference between the performance/yield of devices whose design rule is larger than 0.35 μm , LP seemed not to have detrimental effects on the performance/yield.

Keywords:Czochralski silicon crystal;Flow pattern defect;Large pit;Non-agitated Secco- etching;Device yield;design rule

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[2] Takeno H, Ushio S, Takenaka T, Proc. Symp. Mat. Res. Soc., 51, 51 (1992)

[3] Abe T, Hagimoto K : Proc. of 2nd lnt. Sympo. Advanced Sci. and Tech. of Silicon Materials, p. 242 (1996).

[4] Umeno S, Okui M, Hourai M, Sano M, Tsuya H, Jpn. J. Appl. Phys., 36, L591 (1997)

[5] Wijaranakula W, J. Electrochem. Soc., 141(11), 3273 (1994)

[6] Sadamitsu S, Umeno S, Koike Y, Hourai M, Sumita S, Shigematsu T, Jpn. J. Appl. Phys., 32, 3675 (1993)

[7] Takeno H, Kato M, Kitagawara Y : Proc. 2nd int. Sympo. Advanced Sci. and Tech. of Silicon Materials, p. 294 (1996).

[8] Shiota T, Morita E, Furuya H, Furukawa J, Shingyuijian T, Shimanuki Y : Proc. of the Spring meeting of the Electrochem. Soc., p. 16, (1993).

[9] Ammon WV : Proc. 2nd Int. Sympo. Advanced Sci. and Tech. of Silicon Materia1s, p. 233 (1996).