전리수를 이용한 실리콘 웨이퍼 세정

윤효섭; 류근걸; Hyoseob Yoon; Kunkul Ryoo

Korean Journal of Materials Research, Vol.11, No.4, 251-257, April, 2001

Export Citation

전리수를 이용한 실리콘 웨이퍼 세정

A Study on Si-wafer Cleaning by Electrolyzed Water

윤효섭, 류근걸

순천향대학교 신소재공학과

Hyoseob Yoon, and Kunkul Ryoo

Dept. of Advanced Materials Eng., Soonchunhyang University, 336-745 Asan, Chungnam, Korea

초록

반도체 소자의 고집적화에 따른 세정공정 수는 점점 증가하고 있는 추세에 있다 현재 사용되는 세정은 다량의 화학약품 및 초순수를 소비하며, 고온에서 행하여지고 있는 RCA세정을 근간으로 하고 있다. 세정공정수의 증가는 바로 화학약품의 사용량 증가를 초래하게 되며, 이에 따른 환경문제가 심각하게 대두되고 있는 실정에 이르렀다. 따라서 이러한 화학약품 및 초순수 사용을 절감하고, 저온에서 세정공정이 이뤄지는 기술이 향후 요구되어 지고 있다. 이번 연구는 이러한 관점에서 화학약품 및 초순수 사용량을 줄이며, 상온 공정이 이뤄지는 전리수를 이용하여 실리콘 웨이퍼 세정을 하였다. 제조된 전리수는 산화성 성질을 지닌 양극수와 환원성 성질인 음극수로 이루어지고, 각각 pH 및 ORP는 4.7/+1050mV, 9.8/-750mV를 30분 이상 유지하고 있었다 전리수의 양극수에 의한 금속제거 효과가 음극수의 효과보다 우수함을 확인할 수 있었으며, 다양한 입자제거 실험에도 불구하고, 동일한 분포도를 나타내고 있었다.

A present semiconductor cleaning technology is based upon RCA cleaning, high temperature process which consumes vast chemicals and ultra Pure water(UPW). This technology gives rise to the many environmental issues, therefore some alternatives have been studied. In this study, intentionally contaminated Si wafers were cleaned using the electrolyzed water(EW). The EW was generated by an electrolysis equipment which was composed of anode. cathode, and toddle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case NH 4 Cl electrolyte, the oxidation-reduction potential(ORP) and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.7, and -750mV and 9.8, respectively. For cleaning metallic impurities, AW was confirmed to be more effective than that of CW, and the particle distribution after various particle removal processes was shown to be same distribution.

Keywords:RCA cleaning;electrolyzed water;anode water;cathode water;ORP

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[1] Ohmi T, J. Electrochem. Soc., 143(9), 2957 (1996)

[2] Kern W, Puotinen DA, RCA Rev., 31, 187 (1970)

[3] Aoki H, Yamasaki S, Shiramizu Y, Aoto N, Imaoka T, Futatsuki T, Yamasita Y, Yamanaka K, Extended Abstract of the 1995 International Conference on Solid State Device and Materials, 252 (1995) (1995)

[4] Hattori T, Solid State Tech., 42, 73 (1999)

[5] Morita H, Ida J, Ii T, Ohmi T, Proceeding of the IEEE International Symposium on Semiconductor Manufacturing Conference, 453 (1999)

[6] Ohmi T, UCT Vol. 10 supplement 1, 48 (1998) (1998)

[7] Yamanaka K, Imaoka T, Futatsuki T, Yamashita Y, Mitsumori K, Kasama Y, Aoki H, Yamasaki S, Aoto N, Langmuir, 15(12), 4165 (1999)

[8] Johnson R, 'Surface contamination detection : An Introduction', Tencor Instrument, Inc., Company Brochure, Mountain View, California, 7 (1990) (1990)

[9] Aoki H, Nakamori M, Aoto N, Ikawa E, Jpn. J. Appl. Phys., 33, 5686 (1994)

[10] Pourbaix M, 'Atlas of Electrochemical Equilibriai in Aqueous Solutions', NACE International Cebelcor, 307 (1974) (1974)

[11] 材料熱力學, 李東馥編著, 普成文化社, 505 (1996) (1996)

[12] Miyazaki M, Miyazaki S, Kitamura T, Yanase Y, Ochiai T, Tsuya H, Jpn. J. Appl. Phys., 36, 6187 (1997)

[13] Graf D, Suhren M, Lambert U, Schmolke R, Ehlert A, von Ammon W, Wagner P, J. Electrochem. Soc., 145(1), 275 (1998)