실리콘 웨이퍼 직접 접합에서 기포형 접합 결합에 관한 연구

문도민; 홍진균; 유학도; 정해도; Do-Min Moon; Jin-Kyun Hong; Hak-Do Yoo; Hae-Do Jeong

Korean Journal of Materials Research, Vol.11, No.3, 159-163, March, 2001

Export Citation

실리콘 웨이퍼 직접 접합에서 기포형 접합 결합에 관한 연구

A study on Bubble-like Defects in Silicon Wafer Direct Bonding

문도민, 홍진균, 유학도, 정해도¹

LG 실트론 연구소
¹부산대학교 기계공학부

Do-Min Moon, Jin-Kyun Hong, Hak-Do Yoo, and Hae-Do Jeong¹

R&D center, LG Siltron Inc., Korea
¹School of Mechanical Engineering, Pusan National University, Korea

초록

실리콘 웨이퍼 직접 접합을 성공하기 위해서는 양호한 접합면을 구성하여야 하며, 이를 위해 접합면에서 발생하는 주요 결함 중 하나인 기포형 접합 결함을 억제하여야 한다. 본 연구에서는 접합면에서 발생하는 기포형 결함의 상온 접합 및 열처리 과정에서의 거동을 관찰하여 내부의 압력이 증가함을 직접 관찰할 수 있었다. 또한, 대기압 하의 열처리에서 결함이 발생하지 않는 SiO 2 - SiO 2 접합 웨이퍼가 진공에서의 열처리에서 결함이 발생하는 현상을 통해 기포형 결함의 내부 압력과 성장과의 관계를 실험을 통하여 증명할 수 있었다.

The success of SDB (silicon wafer direct bonding) technology can be estabilished by bonding on the bonded interface with no defects and Preventing temperature dependent bubbles. In this research, we observed the behavior of the intrinsic bubbles by transmitting the infrared light and the increase of the bubble pressure was found. And, the SiO 2 - SiO 2 bonded wafer was achieved, which generates no intrinsic bubbles in the annealing under the atmospheric pressure. The intrinsic bubbles in the SiO 2 - SiO 2 bonded wafer were generated in the annealing in the ultra high vacuum. This experimental result shows the relation between the bubble growth and the pressure.

Keywords:SDB(Silicon Wafer Direct Bonding);intrinsic bubble;bubble pressure;bubble growth

[References]

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[1] Schmidt MA, 'Wafer to Wafer Bonding for Microstructure Formation,' 98 Proceedings of the IEEE, Integrated Sensors, Microactuators & Microsystems, (1998) (1998)

[2] Sze SM, 'Semiconductor Sensor,' JOHN WILEY & SONS, INC, pp. 42-74. (1994) (1994)

[3] Cristoloveanu S, 'Electriccal characterization of silicon on insulator materials and devices', Kluwer Academic Publishers, pp. 1-44, (1995) (1995)

[4] Izumi K, Doken M, Ariyoshi H, Electron Lett., CMOS devices fabricated on buried SiO 2 layers formed by oxygen implantation into silicon, 14, 593 (1978)

[5] Cristoloveanu S, Li SS, 'Electrical characterization of slilicon on insluator materials and devices', Kluwer Academic, Boston (1995) (1995)

[6] Bruel M, Electron. Lett., Silicon on insulator material technology, 31, 1201 (1995)

[7] Lu X, Sundar Kumar Lyer S, Hu C, Cheung NW, Min J, Fan Z, Chu PK, Appl. Phys. Lett., Ion cut silicon on insulator fabrication with plasma immersion ion implantation, 71, 19 (1997)

[8] Mitani K, Lehmann V, Stengl R, Feijoo D, Gosele UM, Massoud HZ, Jpn. J. Appl. Phys, Cause and Prevention of Temperature-Dependent Bubbles in Silicon Wafer Bonding, 30, 4 (1991)

[9] Mitani K, Gosele UM, Appl. Phys. A, Formation of Interface Bubbles in Bonded Silicon Wafers: A Thermodynamic Model, 54 (1992)

[10] Tong QY, Kaido G, Tong L, Feiche M, Shi F, Steinkircchner J, Tan TY, Gosele U, J. Electrochem. Soc., A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding, 142, 10 (1995)