선형열처리법으로 직접 접합된 Si 기판 및 산화된 Si 기판의 접합 특성

이진우; 강춘식; 송오성; 류지호; Jin-Woo Lee; Choon-Sik Kang; Oh-Sung Song; Ji-ho Ryu

Korean Journal of Materials Research, Vol.10, No.10, 665-670, October, 2000

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선형열처리법으로 직접 접합된 Si 기판 및 산화된 Si 기판의 접합 특성

Bonding Characteristics of Directly Bonded Si wafer and Oxidized Si wafer by using Linear Annealing Method

이진우, 강춘식, 송오성 ¹, 류지호²

서울대학교 재료공학부
¹서울시립대학교 재료공학과
²대천대학 기계자동차학부

Jin-Woo Lee, Choon-Sik Kang, Oh-Sung Song¹, and Ji-ho Ryu²

School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
¹Department of Materials Science and Engieering, The University of Seoul, 90 Cheonnong-dong, Tongdaemun-gu, Seoul, 130-743, Korea
²Devision of Machine & Automobile, Daecheon College, San 6-7, Kwansan-ri, Jupo-myun, Boryung-si, Chungnam, 355-830, Korea

초록

실온에서 직접 접합된 실리콘 기판의 접합강도를 향상기키기 위하여 기존의 고온 로내 열처리법을 대체할 수 있는 선형 열처리법을 개발하였다. 한 개의 열원과 타원형 반사경으로 구성된 선형 열처리법은 접합면의 간격이 열처리 온도의 증가와 더불어 감소하는 특성과 온도 증가와 더불어 접합면에 생성된는 기체상의 밀도가 증가하는 현상을 응용하여 접합면의 기체상을 밀도차이를 이용하여 기판 외부로 방출시키는 방법으로 Si ? ? Si 기판쌍 및 Si ? ? SiO 2 /Si 기판쌍의 직접 접합에 적용하여 보았다. IR camera와 HRTEM으로 직접 관찰한 접합면은 실온에서 접합면에 침투한 외부 불순물에 의한 비접합 영역을 제외하고는 자제 생성된 기체상에 의한 비접합 영역은 나타나지 않았고 매우 깨끗한 접합계면을 나타내었다. 접합된 기판쌍을 Crack opening법과 인장시험법을 적용하여 접합 강도를 측정하였다. 접합 강도는 열처리 온도의 증가와 더불어 점차로 증가하였고 두 측정방법 모두 동일한 경향성을 나타내었다.

Linear annealing method was developed to increase the bond strength of Si wafer pair mated at room temperature instead of conventional furnace annealing method. It has been known that the interval of the two mating wafer surfaces decreases and the density of gaseous phases generated at the interface increases with increase in an-nealing temperature. The new annealing method consisting of one heat source and light reflecting mirror used these two phenomena and was applied to Si ? ? Si and Si ? ? SiO 2 /Si bonding. The bonding interface observed directly by using IR camera and HRTEM showed clear bonding interface without any unbonded areas except the area generated by the dusts inserted into the mating interface at the room temperature. Crack opening method and direct tensile test was appplied to measure the bond strength. The two methods showed similar results. The bond strength increased continuoustly with the increase of annealing temperature.

Keywords:Linear Annealing Method;Silicon direct bonding;unbonded area;bond strength

[References]

Lasky JB, Appl. Phys. Lett., 48, 78 (1986)
Shimbo M, Furukawa K, Fukuda K, Tanzawa K, J. Appl. Phys., 60(8), 2987 (1986)
Izumi K, MRS Bulletin, 23(12), 20 (1998)
Mitani K, Lehmann V, Stengl R, Feijoo D, Gosele U, Massoud HZ, Jpn. J. Appl. Phys., 30(4), 615 (1991)
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Tong QY, Kim WJ, Lee TH, Gosele U, Electrochem. Soild-State Lett., 65, 1572 (1994)
Kissinger G, Kissinger W, Sens. Actuators. A, 36, 149 (1993)
Ju BK, Oh MH, Tchah KH, J. Mat. Sci., 29 (1993)
Martini T, Steinkirchner J, Gosele U, J. Electrochem. Soc., 144(1), 354 (1997)
Muller B, Stoffel A, J. Micromech. Microeng., 1, 161 (1991)
Pigeon F, Biasse B, Zussy M, Electron. Lett., 31(10), 792 (1995)
A be T, Sunagawa K, Uchiyama A, Yoshizawa K, Nakazato Y, Jpn. J. Appl. Phys., 32, 334 (1993)
Maszara WP, Goetz G, Caviglia A, Mckitterick JB, J. Appl. Phys., 64(10), 4943 (1988)
Maszara WP, Jiang BL, Baumgart H, Rozgonyi GA, J. Appl. Phys., 69(1), 257 (1991)
Stengl R, Ahn KY, Gosele U, Jpn. J. Appl. Phys., 27, L2364 (1988)
Tong QY, Gosele U, Semiconductor Wafer Bonding : Science and Technology/ John Wiley and Sons.Inc., pp.107, 1999 (1999)
Stengl R, Tan T, Gosele U, Jpn. J. Appl. Phys., 28(10), 969 (1989)
Gillis PP, Gilman JJ, J. Appl. Phys., 35(3), 647 (1964)

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[1] Lasky JB, Appl. Phys. Lett., 48, 78 (1986)

[2] Shimbo M, Furukawa K, Fukuda K, Tanzawa K, J. Appl. Phys., 60(8), 2987 (1986)

[3] Izumi K, MRS Bulletin, 23(12), 20 (1998)

[4] Mitani K, Lehmann V, Stengl R, Feijoo D, Gosele U, Massoud HZ, Jpn. J. Appl. Phys., 30(4), 615 (1991)

[5] Gosele U, Stenzel H, Martini T, Steinkirchner J, Conrad D, Scheerschmidt K, Appl. Phys. Lett., 67, 3614 (1995)

[6] Tong QY, Kim WJ, Lee TH, Gosele U, Electrochem. Soild-State Lett., 65, 1572 (1994)

[7] Kissinger G, Kissinger W, Sens. Actuators. A, 36, 149 (1993)

[8] Ju BK, Oh MH, Tchah KH, J. Mat. Sci., 29 (1993)

[9] Martini T, Steinkirchner J, Gosele U, J. Electrochem. Soc., 144(1), 354 (1997)

[10] Muller B, Stoffel A, J. Micromech. Microeng., 1, 161 (1991)

[11] Pigeon F, Biasse B, Zussy M, Electron. Lett., 31(10), 792 (1995)

[12] A be T, Sunagawa K, Uchiyama A, Yoshizawa K, Nakazato Y, Jpn. J. Appl. Phys., 32, 334 (1993)

[13] Maszara WP, Goetz G, Caviglia A, Mckitterick JB, J. Appl. Phys., 64(10), 4943 (1988)

[14] Maszara WP, Jiang BL, Baumgart H, Rozgonyi GA, J. Appl. Phys., 69(1), 257 (1991)

[15] Stengl R, Ahn KY, Gosele U, Jpn. J. Appl. Phys., 27, L2364 (1988)

[16] Tong QY, Gosele U, Semiconductor Wafer Bonding : Science and Technology/ John Wiley and Sons.Inc., pp.107, 1999 (1999)

[17] Stengl R, Tan T, Gosele U, Jpn. J. Appl. Phys., 28(10), 969 (1989)

[18] Gillis PP, Gilman JJ, J. Appl. Phys., 35(3), 647 (1964)