Korean Journal of Materials Research, Vol.18, No.7, 379-383, July, 2008
CdSe/ZnS 나노결정 양자점 Pyrolysis 제조와 발광다이오드 소자로의 응용
Pyrolysis Synthesis of CdSe/ZnS Nanocrystal Quantum Dots and Their Application to Light-Emitting Diodes
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We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal
quantum dots (QDs) embedded in TiO2thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ~5 nm thick TiO2 thin film, which is inherently an n-type semiconductor. The TiO2 thin film was deposited over QDs at 200oC using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of TiO2/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of 220-280oC. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.
Keywords:CdSe/ZnS nanocrystal light-emitting diode;colloidal quantum dots;TiO2;pyrolysis;chemical vapor deposition
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