Distributed Bragg reflectors (DBRs) consisting of ZnO and amorphous silicon (a-Si) were prepared by magnetron sputtering method for selective light trapping. The quarter-wavelength ZnO/a-Si DBRs with only 6 periods exhibit a peak reflectance of above 99% and have a full width at half maximum that is greater than 347 nm in the range of visible to infrared. The 6-pair reversed quarter-wavelength ZnO/a-Si DBRs also have a peak reflectance of 98%. Combination of the two ZnO/a-Si DBRs leads to a broader stopband from 686 nm to 1354 nm. Using the ZnO/a-Si DBRs as the rear reflector of a-Si thin film solar cells significantly increases the photocurrent in the spectrum range of 400-1000 nm, in comparison with that of the cells with Al reflector. The obtained results suggest that ZnO/a-Si DBRs are promising reflectors of a-Si thin-film solar cells for light trapping. (C) 2015 Elsevier B.V. All rights reserved.