A novel technique for synthesis of high crystalline quality self-assembled InN nanorings, by nitriding the bulk deposited In/Si (5 5 3)-1 x 4 system using low energy N-2(+) ions at 520 degrees C, has been demonstrated. Scanning electron microscopy images reveal the formation of ring shaped InN structures with average size similar to 500 nm. Anisotropic strain relaxation via self assembly could be the driving force for the formation of these InN rings on reconstructed Si (5 5 3) surface. High resolution X-ray diffraction analysis indicates high crystalline quality of these wurtzite InN nanostructures with c-plane. A strong downward band bending was observed in X-ray photoelectron spectroscopy valence band spectra which signify the large electron accumulation in the InN nanostructures. (C) 2015 Elsevier B.V. All rights reserved.