Cupric (CuO) and cuprous (Cu2O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 degrees C with an Ar:O-2 ratio from 2:1 to 12:1. With an Ar:O-2 ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu2O and Cu2O + Cu mixed thin films. As Ar: O-2 ratio reaches 12:1, Cu2O nanorods with diameter of 250 nm and length longer than 1 pm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal-semiconductor-metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at lambda = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 mu s. (C) 2015 Elsevier B.V. All rights reserved.