Aurivillius phase Bi7Fe3(Ti3-xWx)O21 + delta (x = 0 and 0.06) thin films were deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by using a chemical solution deposition method. The W6+-ion doped Bi7Fe3Ti3O21 thin film exhibited tremendous improvements in the electrical and multiferroic properties, namely a low leakage current density, good stability against electrical breakdown, large ferroelectric polarization and large magnetization as compared to the un-doped thin film. The Bi7Fe3(Ti2.94W0.06)O21 + delta thin film was stable against electrical break down at applied electric fields up to 1275 kV/cm, at which the measured remnant polarization (2P(r)) and the coercive field (2E(c)) values were 33.5 mu C/cm(2) and 825 kV/cm, respectively whereas, the measured 2P(r) value of the un-doped Bi7Fe3Ti3O21 thin film was 3.5 mu C/cm(2) at an applied electric field of 318 kV/cm. Furthermore, the Bi7Fe3(Ti2.94W0.06)O21 + (delta) thin film showed a well-saturated ferromagnetic hysteresis loop with large magnetization at room temperature. (C) 2015 Elsevier B.V. All rights reserved.