In this paper, we examine the complementarity of Glow Discharge Optical Emission Spectroscopy (GD-OES) and X Ray Photoelectron Spectroscopy (XPS) for the realization of fine chemical depth profiling of photovoltaic absorbers using Cu(In,Ga)Se-2 (CIGS) materials. The possibility to use sequentially these two techniques is discussed in this paper. We have evaluated the chemical modifications of the crater after GD-OES analyses which depend on the manner of finishing the plasma etching sequence; and we propose different ways to limit or eliminate this effect. For the moment, an intermediate step (wet chemical etching or weak sputtering) is required to obtain a CIGS phase in the crater. Finally, we have demonstrated the possibility to restart the GD-OES analyses of the materials after XPS quantification or GD-OES breaking without modifying the profile shape. (C) 2015 Elsevier B.V. All rights reserved.