Epitaxial growth conditions of V2VI3 semiconductors have been studied using the molecular beam epitaxy technique, which was applied to the growth of Sb2Te3 on Bi2Te3 substrates. These substrates were prepared by gradient freeze method in a Bridgman apparatus. Ingots were cleaved along the (0001) plane. The deposition conditions have been studied as a function of two parameters : substrate temperature and flux ratios of the two elements. The quality of these epilayers was controlled by SEM and X-ray diffraction. Epilayers of good quality have been obtained for the first time.