In an attempt to utilize LaNiO3 as a bottom electrode for PbTiO3 ferroelectric film, PbTiO3 and LaNiO3 films were prepared by the spray-ICP technique under atmospheric pressure. The dense LaNiO3 films crystallized with preferred (1 1 1) and (1 0 0) orientations on sapphire (0 0 1) and MgO (1 0 0), respectively. Resistivities of the LaNiO3 films deposited above 600 degrees C were about 4 x 10(-6) Ohm m. The PbTiO3 film with preferred (0 0 1) orientation was successfully prepared on LaNiO3-coated MgO (1 0 0). Its dielectric constant and dissipation factor were about 200 and 0.02, respectively, at 1 kHz. The Curie temperature suggested that PbTiO3 films were free from contamination by LaNiO3.