We developed a new type of lead-free ferroelectric film: Ba(Ti0.89Sn0.11)O-3 (BTS) with a chemical constituent at its quasi-quadruple point in the phase diagram of BaTiO3-xBaSnO(3). The BTS film was prepared on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrate by means of the sol-gel method. The results show that the asprepared BTS thin film has a perovskite structure with preferred (1 1 0) orientation; a highly converse piezoelectric coefficient of d(33) similar to 135 pm/V; and dielectric permittivity and dielectric loss of similar to 2000 and similar to 0.04, respectively, indicating that this new type of lead-free BTS film can probably be used to replace the conventional BaSrTiO3 and PbZrTiO3 films. (C) 2015 Elsevier B.V. All rights reserved.